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How to choose the configuration of customized corundum tube furnace?

Time:2025-07-25 Click:0
  

The configuration selection of customized corundum tube furnace should comprehensively consider the following core parameters and customization points:

1. Core customization parameters
Furnace structure and installation method
Type selection: Choose horizontal, vertical, openable or rotary furnace body according to experimental needs. For example, horizontal furnaces are convenient for material entry and exit, suitable for large materials or continuous feeding processes; Vertical furnaces have a small footprint and are suitable for places with limited space.
Installation method: Supports horizontal or vertical installation, and some models can be converted through the optional vertical kit.
Furnace size: Customize the furnace length and diameter according to the material size to ensure uniform heating. For example, continuous sintering requires a longer furnace to meet the residence time of materials in each temperature zone.
Material and specifications of corundum tube
Material characteristics: Corundum tube (alumina tube) is resistant to high temperatures (up to 1800 ℃), corrosion-resistant, and suitable for heat treatment of metals, ceramics, and other materials.
Size customization: Select the pipe diameter (such as Φ 40mm – Φ 100mm) and length (such as 300mm -1200mm) according to the furnace size and process requirements. For example, a certain university customized a three temperature zone furnace using Φ 100mm × 1000mm corundum tubes to meet the CVD growth needs of graphene films.
Wall thickness selection: In high-temperature vacuum environments, it is necessary to increase the wall thickness to ensure strength and sealing.
Heating element and temperature control system
Heating element: Choose resistance wire (≤ 1200 ℃), silicon carbon rod (≤ 1400 ℃) or silicon molybdenum rod (≤ 1800 ℃) according to the temperature range. For example, high-temperature furnaces at 1800 ℃ typically use silicon molybdenum rods.
Temperature control method:
Single temperature zone: suitable for simple heat treatment (such as metal annealing).
Multi temperature zone: Independent temperature control in dual temperature zone, triple temperature zone or multi temperature zone to meet complex process requirements (such as the need for temperature rise reaction cooling triple temperature zone for semiconductor epitaxial growth).
Temperature control accuracy: The PID intelligent temperature control system has an accuracy of ± 1 ℃ and supports multi-stage programmed temperature rise and real-time curve display.
Atmosphere control system
Gas type: Supports nitrogen, argon, hydrogen, etc., compatible with reducing/oxidizing/inert environments.
Gas path design: dual inlet and dual outlet, optional mass flow meter (MFC) to ensure gas purity and stability.
Vacuum system: Optional mechanical pump+molecular pump vacuum system, with a maximum vacuum degree of ≤ 10 ⁻ Pa, suitable for vacuum annealing or vapor deposition processes.
Safety and auxiliary functions
Safety protection: functions such as over temperature alarm, leakage protection, self recovery in case of power failure, and power-off when opening the door ensure safe operation.
Auxiliary tools: Optional high-temperature gloves, crucible pliers, paperless recorder, etc. are available for easy experimental operation and data recording.
Observation window: High temperature resistant quartz glass observation window can observe the experimental process in real time.

2. Typical application scenarios and configuration cases
Preparation of Semiconductor Materials
Requirement: Three temperature zone independent temperature control, high vacuum environment (≤ 10 ⁻ ³ Pa), precise atmosphere control.
Configuration: Vertical three zone furnace body, silicon molybdenum rod heating element, molecular pump vacuum system, mass flow meter gas supply system.
Case: A research institute customized equipment for silicon-based epitaxial growth, achieving uniform deposition of single crystal thin films through gradient temperature control.
Metal heat treatment
Requirements: High temperature uniformity (± 3 ℃), inert gas protection, rapid heating rate (≤ 20 ℃/min).
Configuration: Horizontal single temperature zone furnace body, silicon carbon rod heating element, dual inlet+mass flow meter, composite alumina fiber insulation layer.
Case: A certain enterprise customized equipment for titanium alloy annealing, which increased material hardness by 20% through precise temperature control.
Nanomaterial synthesis
Requirement: Multi zone gradient temperature control, rotating furnace tube (0-10rpm), real-time temperature curve monitoring.
Configuration: rotatable three zone furnace body, resistance wire heating element, touch screen interface, K-type thermocouple.
Case: A university customized equipment for nanowire synthesis, achieving temperature uniformity of ± 2 ℃ and particle size distribution standard deviation of<5% through a rotating furnace tube.

3. Customization process and precautions
Requirement communication
Provide detailed parameters such as experimental objectives, temperature curves, sample size, and atmosphere requirements to avoid over customization or insufficient functionality.
scheme design
The manufacturer designs the furnace layout, heating element types, furnace tube materials, etc. according to the requirements, and needs to clarify the temperature range of each temperature zone, transition zone design, atmosphere sealing, etc.
Production and Testing
After production is completed, conduct no-load testing (temperature uniformity, atmosphere leakage rate) and load testing (simulating actual process conditions), with the standard of temperature uniformity ≤ ± 3 ℃ and atmosphere leakage rate ≤ 0.5% vol/h.
Delivery and Training
The manufacturer provides on-site installation and debugging, and trains operators on the use of temperature control systems, air circuit control, safety protection, and other functions.

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