PECVD plasma chemical gas deposition system-knowledge

The PECVD system is a thin film deposition equipment based on plasma chemical gas deposition technology. It is mainly used for sedimentary film on the surface of various materials, including metal, semiconductors, and insulators. The system is mainly composed of plasma sources, reaction rooms, gas feed devices, vacuum pumps and other parts. It is a special equipment for preparing film materials. Its working principle is similar to chemical gas deposition (CVD), but the plasma is introduced in the reaction room to enhance the deposition process.

1. The working principle of PECVD plasma enhanced chemical gas deposition system:

In the PECVD system, the plasma is formed in the sedimentary reactor through the low vacuum conditions through methods such as DC voltage, AC voltage, radio frequency, microwave, or electronic rotation resonance. Positive ions, electron and neutral reactions in these plasma collide with each other, which can greatly reduce the deposition temperature. At the same time, the PECVD system usually uses a radio frequency to generate plasma. The bombardment of the ion provides energy to the secondary biomass, so that it can form a film deposition at a chemical reaction on the surface of the substrate at a lower temperature. Reaction conditions such as temperature, pressure, gas flow, and energy density of plasma can be adjusted and optimized through system control.

PECVD principle

2. The main parameters of the PECVD system:

The technical parameters of the PECVD system include design temperature, temperature control accuracy, heating area diameter, heating area length, heating pipe length, constant temperature zone length, rated voltage, etc. In addition, the system can also mix 1-3 gas for CVD or diffuse, and has the characteristics of the furnace cover that can be opened, which can observe the heating materials in real time.

The main components of the PECVD system

3. The main application field of the PECVD system:

① Semiconductor Manufacturing: It is used to prepare silicon oxide film, silicon nitride film, etc. for insulation layers and pore filling for semiconductor devices.
② Optical film: used to prepare optical membrane layers, such as anti -reflex coating, optical filter, reflector coating, etc.
③ Solar battery: It is used to prepare various layers of solar cells, such as thin -film silicon solar cells, amorphous silicon solar cells, etc.
④ coating material: used to prepare anti -corrosive coating, hard coating, anti -reflected coating, etc.

4. The characteristics and advantages of the PECVD system:

① High controllability: The PECVD system can accurately control the reaction conditions and achieve free control of the film deposition process.
② Uniformity and repetitiveness: Through systematic optimization and control, the uniformity and repetitiveness of the film can be realized.
③ Multifunctional: The PECVD system can be suitable for a variety of reaction gas and multiple substrate materials, with high flexibility and generalability.
④ Low temperature deposition: Compared with the traditional hot CVD method, PECVD can usually deposit at low temperatures, thereby applying to the application of sensitivity to the temperature of the substrate.

Various different models of PECVD devices (click the picture to learn more PECVD devices)

5. Summary:

The PECVD system is an important chemical technology that has been widely used in fields such as purifying substances, developing new crystals, and deploying various thin film materials. It plays an important role in preparing various functional thin -film materials and is one of the key equipment in the science and engineering field of modern materials. Click to learn more PECVD devices! Or click on online customer service to learn more about product information!