What are the characteristics of PECVD?

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a commonly used thin film deposition technique, and its CVD chemical vapor deposition is different. Let’s take a look at the characteristics of PECVD furnaces!

Commonly used PECVD (click on image to view product details)

Lower heating temperature: PECVD allows for a relatively lower substrate temperature during the deposition process, from room temperature to 350 ° C, which is achieved by using plasma to provide energy for the deposition reaction, rather than heating the substrate to high temperature. So compared to the high temperature heating situation in CVD furnaces, this low-temperature characteristic makes PECVD very advantageous for materials that are sensitive to high temperature or cannot withstand high temperature treatment, such as plastics.
Low temperature has little effect on the substrate: PECVD deposited films have lower stress and stronger adhesion. Due to the ability of high-energy electrons to excite gas molecules to a sufficiently active state, chemical reactions can occur at relatively low temperatures. Therefore, the substrate can maintain low temperatures, avoiding potential thin film stress and adhesion issues caused by high temperatures.
High deposition rate: The presence of plasma can increase the rate of gas-phase reactions, so PECVD usually has a high deposition rate and can quickly prepare thin films.
Wider range of sedimentary materials: PECVD technology is suitable for the deposition of various materials, including but not limited to inorganic materials such as nitrides, oxides, carbides, silicon, as well as organic materials such as polymers.
Good film coverage: The reactants in the plasma have high kinetic energy, which allows them to undergo chemical reactions on various surfaces, including vertical and inclined surfaces. This enables PECVD to form high-quality films throughout the entire range of the substrate, including difficult to reach areas.
Adjustable performance of deposited thin films: By adjusting plasma parameters and deposition conditions, the performance of deposited thin films can be controlled, including crystallinity, refractive index, thickness, etc.
Good uniformity: Under the action of plasma, the uniformity of the deposited film is usually good, which can achieve uniform coverage of a large area of substrate.
Easy to control: PECVD systems are usually equipped with advanced control systems that can achieve precise control of the deposition process, including the adjustment of parameters such as deposition rate, film thickness, and composition.
Low energy consumption: Compared to other deposition technologies, PECVD is usually able to complete the deposition process at lower energy consumption, which is beneficial for energy conservation and emission reduction.
Suitable for complex structures: PECVD technology can deposit on substrates with complex structures, suitable for the preparation of multi-layer films and the processing of complex structures.

PECVD with ultrasonic atomization (click on image to view product details)

Widely applicable fields: In the field of optics, it can be used to manufacture optical thin films, such as anti reflective films, reflective films, etc; In the semiconductor industry, PECVD is used to manufacture integrated circuits, solar cells, etc; In surface engineering, it is used to improve the wear and corrosion resistance of material surfaces.Click to learn more PECVD devices! Or click on online customer service to learn more about product information!

Various types of PECVDs (click on the image to view more PECVDs)