The temperature range of plasma enhanced PECVD coating electric furnace varies depending on the equipment model and application requirements. The common temperature ranges are as follows:
Low temperature range: usually between 200 ℃ and 400 ℃, suitable for materials or processes that are sensitive to heat, such as flexible electronic devices, organic materials, etc. This low-temperature process can avoid thermal damage to the substrate material caused by high temperatures, while maintaining a high deposition rate and film quality.
Medium temperature range: Some equipment can operate at temperatures ranging from 450 ℃ to 800 ℃, suitable for deposition processes that require higher reactivity, such as the growth of certain semiconductor materials or the deposition of thin films with specific chemical compositions.
High temperature range: The working temperature of a few high-end devices can reach up to 1200 ℃, suitable for special processes that require high temperatures, such as the deposition of certain high melting point materials or the growth of specific crystal structures. However, high-temperature PECVD processes are relatively rare, as most PECVD applications aim to utilize plasma assisted low-temperature deposition.