What are the differences between plasma enhanced PECVD coating electric furnace and CVD?

The plasma enhanced PECVD coating furnace differs from traditional CVD (chemical vapor deposition) in the following ways:

Working principle:
CVD: Relying on thermal energy to drive gas-phase precursors to undergo chemical reactions on the substrate surface, forming the required solid thin film.
PECVD: By applying an electric field to the reactor and relying on radio frequency induction to ionize the target material source gas, plasma is generated to increase the activity of reactants and promote the reaction.

Temperature conditions:
CVD: Usually requires a higher temperature, typically between 600 ℃ -800 ℃, or even higher, to ensure that the gas undergoes a chemical reaction on the substrate surface to form a thin film.
PECVD: Due to the action of plasma, reactions can occur at lower temperatures, typically from room temperature to 350 ℃, with a maximum not exceeding 450 ℃, making it suitable for temperature sensitive substrate materials.

Sedimentation rate and uniformity:
CVD: The deposition rate is relatively slow, and it is difficult to obtain uniform thin films on complex shaped substrates. The edge coverage may be poor in high aspect ratio structures or non planar surfaces.
PECVD: With the high activity of plasma, the deposition rate is usually faster, which can form thin films in a shorter time and achieve good film uniformity, even on complex structures with good edge coverage.

Film quality and characteristics:
CVD: Although high-quality films can be obtained by controlling process parameters, high-temperature processes may introduce impurities, and the density and uniformity of the film are slightly inferior to PECVD, especially for some high-precision applications.
PECVD: It can generate thin films with good uniformity, high purity, and high density, with fewer defects in the film and better step coverage ability, making it more suitable for high-precision applications such as insulation layers and semiconductor material deposition in semiconductor manufacturing.

Process flexibility and controllability:
CVD: The process is relatively mature, but the parameter adjustment range is relatively narrow, and its adaptability to some special materials or complex structures may be limited. It is difficult to implement special processes such as in-situ doping.
PECVD: By adjusting parameters such as RF power, gas flow rate, and gas pressure, the composition, structure, and properties of the film can be precisely controlled, enabling special processes such as in-situ doping, resulting in higher process flexibility and controllability.

Equipment cost and operating cost:
CVD: The equipment is relatively simple and the investment cost may be low, but due to the need for a high-temperature environment, energy consumption is high, long-term operating costs are high, and the cost of quartz consumables is also high.
PECVD: Due to the involvement of complex components such as plasma generators, the investment cost of the equipment is relatively high. However, the low-temperature process saves energy, reduces operating costs, and the efficient deposition rate and uniformity reduce material waste. In the long run, the comprehensive cost may have certain advantages.

Application scenarios:
CVD: commonly used in applications that require high temperature stability, such as tool coatings, wear-resistant surface coatings, etc. It is also widely used in the preparation of metal thin films, oxide thin films, silicon carbide and other materials.
PECVD has advantages in advanced microelectronics, optoelectronics, and coating of temperature sensitive materials, such as dielectric insulation layer and semiconductor material deposition in semiconductor chip manufacturing, anti reflection film and passivation film deposition in solar panel preparation, etc.