Application of experimental tubular CVD electric furnace in the semiconductor industry

The application of experimental tubular CVD electric furnaces in the semiconductor industry is extensive and critical, mainly reflected in the following aspects:

1. Thin film deposition
Insulation layer deposition: CVD electric furnaces are used to deposit insulation layers such as silicon dioxide (SiO ₂) and silicon nitride (Si ∝ N ₄), which serve as electrical insulation, protection, and passivation in semiconductor devices.
Metal layer deposition: The deposition of metal layers such as tungsten (W), titanium (Ti), titanium nitride (TiN), and aluminum (Al), which are mainly used for interconnection and contact hole filling, and are the key paths for current transmission in semiconductor devices.
Doping layer deposition: such as the deposition of phosphosilicate glass (PSG) and borosilicate glass (BSG), used for local doping and surface passivation to improve the performance of semiconductor devices.
High k material deposition: deposition of high k dielectric materials such as hafnium oxide (HfO ₂) and zirconium oxide (ZrO ₂), which are used as MOSFET gate dielectrics to reduce leakage current and improve device performance.
Barrier layer deposition: deposition of titanium nitride (TiN) and tantalum nitride (TaN) as diffusion barriers for copper interconnects, preventing metal diffusion and protecting device integrity.
Hard mask layer deposition: such as silicon nitride (Si ∝ N ₄) and silicon oxide (SiO ₂), used as hard masks in photolithography processes to provide high-resolution pattern transfer and etching protection.

2. Epitaxial growth
CVD electric furnaces are used for epitaxial growth of single crystal silicon or other semiconductor materials (such as silicon carbide and gallium nitride), forming high-quality single crystal layers on the wafer surface, which is crucial for improving the integration and performance of semiconductor devices.

3. Special material deposition
Carbon nanotube and graphene growth: CVD electric furnaces can be used to grow carbon nanotube and graphene materials, which have wide applications in electronic devices and sensors, such as improving the conductivity, thermal conductivity, and mechanical strength of devices.
Optical and optoelectronic materials: CVD electric furnaces can also be used to prepare materials for optical and optoelectronic devices, such as gallium nitride (GaN) and other III-V compound semiconductors, which have great applications in fields such as LEDs and lasers.

4. Photovoltaic cell manufacturing
CVD electric furnaces are used to manufacture thin-film solar cells, such as silicon thin films and compound semiconductor thin films (such as CdTe and CIGS), which have high photoelectric conversion efficiency and are an important component of the renewable energy field.

5. Manufacturing of Micro Electro Mechanical Systems (MEMS)
CVD electric furnaces are also used in MEMS manufacturing, such as depositing materials such as polycrystalline silicon and silicon oxide, for manufacturing micro mechanical structures and sensors.

6. Manufacturing of gas sensors
By depositing sensitive thin films through CVD, high-sensitivity metal oxide semiconductor gas sensors can be manufactured for use in environmental monitoring and industrial control fields.

7. Deposition of encapsulation protective layer
CVD electric furnaces are also used to deposit protective layers to improve packaging reliability and durability, protecting semiconductor devices from external environmental influences.

8. Three dimensional integrated circuit (3D IC) manufacturing
CVD electric furnaces play an important role in the manufacturing of three-dimensional integrated circuits, by depositing high-quality insulation layers and metal filling materials, and creating through silicon vias to achieve three-dimensional interconnection.