Application of Rapid Annealing RTP Tube Furnace in Semiconductor Industry

The rapid annealing RTP (Rapid Thermal Processing) tube furnace is widely used and critical in the semiconductor industry, providing an efficient and reliable heat treatment solution for semiconductor manufacturing through rapid temperature rise and fall and precise temperature control technology. The following are its main application areas and specific roles in the semiconductor industry:

1. Annealing after ion implantation: repairing lattice damage and activating doped impurities
Function: Ion implantation is the core process for introducing doping impurities in semiconductor manufacturing, but it can damage the lattice structure and produce defects. RTP tube furnace promotes lattice repair and impurity activation through rapid heating (up to 150 ℃/s) and short-term insulation, while avoiding excessive diffusion of impurities.
Advantages: Compared to traditional tube annealing (which takes several hours), RTP tube furnace can complete annealing in seconds to minutes, significantly shortening the process cycle, reducing thermal budget, and improving device performance.
Application scenarios: Key steps in the manufacturing of CMOS devices, power devices, etc.

2. Metal silicide formation: optimizing contact resistance and improving device performance
Function: Form low resistance silicides (such as TiSi ₂, CoSi ₂) at the contact between metal and semiconductor, reduce contact resistance, and improve device speed.
Advantage: The rapid annealing of RTP tube furnace can accurately control the thickness and uniformity of silicide, avoiding performance degradation caused by excessive reaction.
Application scenario: Preparation of metallization layers for MOSFET, FinFET and other devices.

3. Oxide/Nitride Growth: Preparation of High Quality Dielectric Layers
Function: To grow dielectric layers such as SiO ₂ and Si ∝ N ₄, used for gate insulation or passivation layers.
Advantages: Through rapid oxidation/nitridation processes, thermal budget is reduced, material damage is avoided, and film density is improved.
Application scenarios: Deposition of dielectric layers in the manufacturing of CMOS devices, MEMS devices, and other applications.

4. Ohmic contact fast alloy: reduces contact resistance and improves reliability
Function: Form low contact resistance between metal electrodes and semiconductors to enhance device performance.
Advantage: The rapid annealing of RTP tube furnace can avoid excessive metal diffusion and ensure the stability of the contact interface.
Application scenarios: electrode preparation for solar cells, LEDs, and other devices.

5. CMOS Device Backend Process: Repair Damage, Improve Reliability
Function: Repair damage and defects generated during the manufacturing process, reduce oxide trap charges and interface state density, and enhance device electrical performance.
Advantages: Rapid annealing can shorten process time, reduce thermal stress, and improve device lifespan.
Application scenarios: Passivation layer processing, stress relief, etc. for CMOS devices.

6. Wide bandgap semiconductor processing: optimizing material properties and expanding application areas
Function: In the preparation of wide bandgap semiconductor materials such as GaN and SiC, it improves the crystalline quality of thin films, reduces defects, and enhances optoelectronic performance.
Advantages: The rapid annealing of RTP tube furnace can eliminate internal stress in thin films, optimize crystal structure, and meet the needs of high-frequency and high-voltage devices.
Application scenarios: Manufacturing high-power devices in fields such as 5G communication and new energy vehicles.

7. Wafer Heat Treatment: Improving Device Performance and Reliability
Function: Perform overall heat treatment on wafers, optimize crystal structure, repair defects, and improve device performance.
Advantages: Rapid temperature rise and fall can reduce thermal budget and avoid material performance degradation.
Application scenarios: Pre treatment or post-processing of silicon-based and compound semiconductor wafers.

8. Packaging process: eliminate stress and improve packaging quality
Function: After lead cutting and assembly, eliminate internal stress, improve packaging stability and reliability.
Advantages: Rapid annealing can avoid material damage caused by traditional heat treatment and improve product life.
Application scenarios: IC packaging, power module packaging, etc.