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Can RTP tube furnace be used for rapid annealing of metals?

Time:2025-08-20 Click:0
  

The rapid annealing RTP tube furnace can be used for rapid annealing of metals, and its applications in the metal field are mainly reflected in the following aspects:

1. Annealing of metal compounds: In semiconductor device manufacturing, metal compounds such as metal silicides are commonly used as contact layers between electrodes and semiconductor materials. RTP tube furnace can eliminate defects and stresses caused by metal compounds during the manufacturing process and improve its performance through rapid annealing treatment. For example, in the process of metal silicide formation, RTP tube furnace can quickly activate the chemical reaction between metal and silicon, forming a low resistance and high stability metal silicide layer, thereby optimizing the electrical performance of the device.

2. Metal material processing: RTP tube furnace can be used for processes such as brazing of metal materials and sintering of powder metals. Its rapid temperature rise and fall ability provides suitable heat treatment conditions for the connection and forming of materials, which helps to improve the mechanical properties and corrosion resistance of metal materials. For example, during the brazing process, the RTP tube furnace can quickly heat up to the brazing temperature, promoting the melting and filling of the brazing material while avoiding excessive heating and deformation of the base material.

3. Preparation of metal electrodes: In the manufacturing of semiconductor devices and solar cells, the quality of metal electrodes directly affects the conductivity and stability of the devices. RTP tube furnace can be used for rapid annealing of metal electrodes, eliminating stress and defects generated during electrode preparation, and improving the adhesion and conductivity between electrodes and semiconductor materials. For example, in solar cell manufacturing, RTP tube furnace can be used for the bonding process of solar cells. Through rapid annealing treatment, a good ohmic contact is formed between the metal electrode and the silicon wafer, reducing contact resistance and improving the photoelectric conversion efficiency of the cell.

4. Metal film processing: RTP tube furnace can also be used for the growth and regulation of metal films. Through rapid annealing treatment, the crystal quality and surface morphology of metal thin films can be improved, and the conductivity and corrosion resistance of the films can be enhanced. This is of great significance for the development of high-performance microelectronic devices and sensors.

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