Application fields of bell type lifting high-temperature muffle furnace

The bell type lifting high-temperature muffle furnace, with its precise temperature control, efficient sealing performance, and flexible operation design, is widely used in fields such as materials science, new energy, semiconductors, aerospace, etc. that require strict heat treatment processes. The following is a detailed analysis of its core application areas:

1. Materials Science Field
Advanced Ceramic Preparation
Aluminum oxide/zirconia ceramics: sintered at 1600-1800 ℃, achieving density and high bending strength through precise temperature control, meeting the high-performance requirements of biomedical materials such as dental implants and artificial joints.
Silicon nitride ceramics: Sintered at 1400 ℃ under nitrogen protection, the material cracking is suppressed by adjusting the furnace pressure, and high-strength and high wear resistant bearing balls are prepared.
Transparent ceramics: High temperature sintering at 1800 ℃ is completed in a hydrogen atmosphere. By controlling the oxygen partial pressure to reduce the light scattering center, high transmittance magnesium aluminum spinel transparent ceramics are prepared for use as laser window materials.
Metal heat treatment
Titanium alloy: annealed at 650 ℃ in a vacuum environment to eliminate work hardening, increase elongation and reduce hardness, significantly improving the cold forming performance of aviation fasteners.
High temperature alloy: The alloy is subjected to 720 ℃ aging treatment, and the precipitation of γ ‘phase is precisely controlled through multi-stage heating curves, resulting in an increase in the material’s durability strength at 650 ℃.
Refractory metal: tungsten rod is annealed at 1800 ℃ under argon protection, and cracking is avoided by controlling the heating rate to prepare large-diameter tungsten electrodes.

2. New energy industry
Synthesis of lithium battery materials
Triple cathode material (NCM/NCA): By optimizing the diffusion path of lithium ions through segmented heating, the specific capacity of the material is increased and the cycle life is extended.
Solid electrolyte: The 550 ℃ sintering of sulfide solid electrolytes (such as Li ₁₀ GeP ₂ S ₁₂) is completed in a vacuum environment. By controlling the oxygen partial pressure to suppress sulfide oxidation, electrolyte sheets with high ionic conductivity are prepared, approaching the level of liquid electrolytes.
Silicon based negative electrode: Carbonization treatment at 1000 ℃ is carried out under argon protection, and the thickness of the carbon coating layer is controlled by adjusting the furnace pressure to improve the first coulombic efficiency of the silicon based negative electrode.
Development of hydrogen energy materials
Proton Exchange Membrane Fuel Cell (PEMFC): Heat treat the Nafion membrane at 130 ℃, optimize the distribution of sulfonic acid groups by controlling humidity and heating rate, and improve the proton conductivity of the membrane.
Hydrogen storage alloy: LaNi ₅ alloy is vacuum annealed at 900 ℃ to form a nanocrystalline structure by controlling the cooling rate, which increases the maximum hydrogen absorption capacity of the alloy and meets the requirements of on-board hydrogen storage systems.

3. Semiconductors and Electronic Components
wafer fabrication
Silicon chip oxidation: 1200 ℃ oxidation is completed in a dry oxygen atmosphere (O ₂ flow rate=5 L/min), and PID temperature control is used to improve the uniformity of the oxide layer thickness, meeting the requirements of chip manufacturing.
Diffusion process: Phosphorus diffusion is carried out at 950 ℃ on n-type silicon chips, and the doping concentration is controlled by adjusting the furnace pressure to prepare the key material for Schottky diodes.
Annealing treatment: The chip after ion implantation is subjected to 400 ℃ rapid annealing (RTP) under nitrogen protection, and the doping agent is activated by controlling the heating rate to reduce the leakage current of the device.
Ceramic substrate sintering
Aluminum nitride (AlN) substrate: Sintered at 1800 ℃ in a nitrogen atmosphere, the formation of Al ₂ O Ⅲ impurities is suppressed by controlling the oxygen partial pressure, resulting in a high thermal conductivity substrate suitable for high-power LED and IGBT modules.
Beryllium oxide (BeO) substrate: sintered at 1900 ℃ in a vacuum environment, and controlled grain growth by adjusting furnace pressure to meet military grade radiation resistance requirements for thermal conductivity.

4. Aerospace and high-end manufacturing
Aeroengine components
Single crystal turbine blades: directional solidification at 1450 ℃ is completed in a vacuum environment. By controlling the temperature gradient inside the furnace to suppress the formation of equiaxed crystals, orientation deviation single crystal blades are prepared, raising the temperature in front of the turbine to 1700 ℃ and increasing engine thrust.
Thermal barrier coating (TBC): After plasma spraying treatment at 1100 ℃ on nickel based alloy substrate, the oxidation of the coating is avoided by controlling the oxygen partial pressure in the furnace, which improves the thermal cycle life of the coating and meets the long-term service requirements of aviation engines.
Nuclear energy materials
Zirconium alloy cladding tube: annealed at 400 ℃ under argon protection, forming a fine grain structure by controlling the cooling rate, reducing the corrosion resistance rate of the material in 360 ℃ water, and meeting the safety standards of nuclear reactors.
Silicon carbide (SiC) fuel cladding: Sintered at 1800 ℃ in a vacuum environment, the neutron absorption cross-section SiC cladding is prepared by controlling the oxygen partial pressure to suppress the generation of SiO ₂ impurities, thereby improving the utilization efficiency of nuclear fuel.

5. Research and Education Fields
New material research and development
Perovskite solar cells: Conduct 500 ℃ annealing treatment in a nitrogen atmosphere, optimize the perovskite crystal structure by controlling the heating rate, and improve the photoelectric conversion efficiency of the cell.
Two dimensional materials (such as graphene): Chemical vapor deposition (CVD) is performed at 1000 ℃ under argon protection, and the carbon source decomposition rate is adjusted by controlling the furnace pressure to prepare graphene films with high single-layer coverage.
teaching experiment
Materials Science Course: Support students to conduct basic experiments such as metal phase transition and ceramic sintering, monitor material melting and shrinkage processes in real time through observation windows, and cultivate engineering practical abilities.
Interdisciplinary research: providing high-temperature experimental platforms for multiple disciplines such as chemistry, physics, and mechanics, such as simulating mantle environments (1500 ℃, 1 GPa) to study mineral phase transition mechanisms.