Application of Vacuum Coating CVD Electric Furnace in Semiconductor Industry

The application of vacuum coating CVD electric furnace in the semiconductor industry is as follows:

1. Insulation layer deposition: CVD electric furnaces are used to deposit insulation layers such as silicon dioxide (SiO ₂) and silicon nitride (Si ∝ N ₄), which serve as electrical insulation, protection, and passivation in semiconductor devices. For example, in transistor manufacturing, SiO ₂ thin films deposited through CVD process can effectively isolate different conductive layers, reduce leakage current, and improve the reliability and service life of chips.
2. Metal layer deposition: CVD electric furnace can deposit metal layers such as tungsten (W), titanium (Ti), titanium nitride (TiN), and aluminum (Al), which are mainly used for interconnection and contact hole filling. For example, in multi-layer interconnect structures, PVD equipment first sputter deposits a barrier layer (such as titanium nitride) to prevent copper atom diffusion, and then deposits a copper seed layer through CVD, laying the foundation for copper electroplating process, accurately controlling film thickness and composition, reducing interconnect resistance, and improving signal transmission speed.
3. Doping layer deposition: CVD electric furnace is used to deposit doping layers such as phosphosilicate glass (PSG) and borosilicate glass (BSG), achieving local doping and surface passivation, and improving the performance of semiconductor devices. For example, PSG thin film can serve as a field oxide layer, reducing leakage current on the device surface and improving the stability and reliability of the device.
4. Epitaxial growth: CVD electric furnace is used for epitaxial growth of single crystal silicon or other semiconductor materials (such as silicon carbide, gallium nitride), forming high-quality single crystal layers on the wafer surface. This is crucial for improving the integration and performance of devices. For example, in the field of power semiconductors, silicon carbide (SiC) epitaxial layers are widely used in electric vehicles, aerospace and other fields due to their high temperature resistance, radiation resistance and other characteristics.
5. High k material deposition: CVD electric furnace can deposit high k dielectric materials such as hafnium oxide (HfO ₂) and zirconium oxide (ZrO ₂) for MOSFET gate dielectric to reduce leakage current and improve device performance. For example, in advanced process chip manufacturing, the application of high-k materials allows for further reduction in transistor size while maintaining lower power consumption.
6. Barrier layer deposition: CVD electric furnaces are used to deposit barrier layers such as titanium nitride (TiN) and tantalum nitride (TaN) as diffusion barriers for copper interconnects, preventing metal diffusion and protecting device integrity. For example, in the manufacturing of 3D NAND flash memory, the application of barrier layers effectively prevents the diffusion of copper atoms into the dielectric layer, improving the reliability and durability of the device.
7. Growth of carbon nanotubes and graphene: CVD electric furnaces can be used to grow carbon nanotubes and graphene materials, which have a wide range of applications in electronic devices and sensors. For example, carbon nanotubes are used to manufacture high-performance field-effect transistors and sensors due to their excellent conductivity and mechanical strength; Graphene is used in high-frequency electronic devices and transparent conductive films due to its high carrier mobility.
8. Manufacturing through Silicon Via (TSV): CVD electric furnace is used to deposit high-quality insulation layers and metal filling materials, and to achieve three-dimensional integrated circuit (3D IC) interconnection through TSV. For example, in 3D IC manufacturing, TSV technology significantly improves the integration and performance of chips through vertical interconnects, while reducing power consumption and latency.
9. Deposition of packaging protective layer: CVD electric furnace is used to deposit protective layer to improve packaging reliability and durability, and protect semiconductor devices from external environmental influences. For example, in MEMS sensor manufacturing, CVD deposited silicon oxide or silicon nitride protective layers can effectively prevent the sensor from being corroded by pollutants such as moisture and dust, improving the stability and lifespan of the sensor.