Rapid temperature rise and fall annealing furnace maximum temperature

The maximum temperature of a rapid rise and fall annealing furnace (RTP) can usually reach 1200 ℃, and some equipment may approach or slightly exceed this value under specific design or customization conditions. The following is a specific analysis:

1. The maximum temperature range of mainstream equipment
Standard RTP equipment
Typical upper temperature limit: 1200 ℃
Application scenarios: Crystalline silicon solar cells, semiconductor ion implantation annealing, silicide formation and other processes that require rapid elimination of material defects or activation of doping elements at high temperatures.
High temperature customized equipment
Temperature upper limit extension: Some devices can increase the maximum temperature to 1250 ℃ or even higher by optimizing heating elements (such as high-power halogen lamps) or furnace materials (such as high-purity alumina fibers).
For example, a certain model of RTP device can achieve a maximum temperature of 1250 ℃ by increasing the power density of halogen lamps under customized configuration, but it requires sacrificing some heating rate or temperature uniformity.
Limiting factors: High temperature demands higher requirements for furnace materials, heating element lifespan, and temperature control accuracy, requiring a balance between process requirements and equipment stability.

2. Key factors affecting the highest temperature
Heating element performance
Halogen lamp power density: The higher the power of a single halogen lamp, the greater the total power, and the easier it is to increase the heating rate and maximum temperature.
Lamp lifespan: High temperatures can accelerate lamp aging and require regular replacement (such as a 3000 hour lifespan). Frequent high-temperature operation may shorten maintenance cycles.
Furnace materials and structure
High purity alumina fiber: Vacuum adsorption molding process can reduce heat loss, and surface coating with high reflectivity coating (such as gold plating treatment) can further improve thermal efficiency and support higher temperature operation.
Quartz furnace: The detachable design is convenient for cleaning smoke pollution, but quartz material is prone to deformation at high temperatures, and the upper temperature limit needs to be controlled to avoid damage.
Accuracy of temperature control system
Sensor type: The temperature measurement range and accuracy of S-type single platinum rhodium thermocouple or K-type thermocouple directly affect the maximum temperature setting.
Control mode: Intelligent fuzzy PID fully closed-loop control can reduce temperature fluctuations (such as ± 1 ℃) and ensure process stability at high temperatures.

3. Typical application scenarios and temperature requirements
Semiconductor Manufacturing
Annealing after ion implantation: It is necessary to quickly repair lattice damage and activate doping elements (such as boron and phosphorus) at 1000-1200 ℃, requiring the equipment to have high heating rate and precise temperature control capability.
Silicide formation: Cobalt silicide (CoSi ₂) requires annealing at 600-800 ℃, but some processes may require higher temperatures to optimize film properties.
Photovoltaic cell production
PERC cell passivation layer annealing: usually carried out at 800-900 ℃.
Crystallization of perovskite cells: Some processes require annealing at 120 ℃ -150 ℃, but high-temperature annealing (such as 300 ℃) may be used to improve film stability, requiring equipment with wide temperature range adaptability.
New material research and development
Nitride film growth: For example, GaN films need to be annealed at 1000-1100 ℃ to optimize crystallinity, requiring equipment temperature uniformity of ≤± 2 ℃.
Preparation of Graphene: After CVD synthesis of graphene, it is necessary to reduce defects by annealing at 600-1000 ℃. Some studies may explore the material properties at higher temperatures.