Application of customized PECVD electric furnace in the semiconductor industry

Customized PECVD electric furnaces are widely and crucially used in the semiconductor industry, achieving high-quality thin film deposition at low temperatures through plasma enhanced chemical vapor deposition technology, providing important support for the manufacturing of semiconductor devices. The following is an analysis of specific application scenarios and advantages:

1. Core application scenarios
Insulation layer deposition
Materials: Silicon Nitride (SiN ₓ), Silicon Dioxide (SiO ₂)
Function: As the gate dielectric layer of transistors and the dielectric layer of metal interconnects, it isolates conductive layers and prevents impurity diffusion.
Advantages: PECVD can deposit high-density thin films at low temperatures (<400 ℃), avoiding damage to devices caused by high temperatures, while achieving low pinhole density and good interface characteristics.
Passivation layer deposition
Materials: Silicon Nitride (SiN ₓ), Aluminum Oxide (Al ₂ O3)
Function: Protect semiconductor devices from external environmental factors such as moisture and oxygen, and improve device lifespan and stability.
Advantages: The passivation layer deposited by PECVD is uniform and dense, which can effectively reduce surface defects and improve device reliability.
Low k dielectric material deposition
Materials: Carbon doped silicon oxide (SiCOH), etc
Function: Reduce the capacitance effect between interconnects, minimize signal delay, and improve device performance.
Advantages: PECVD can precisely control the dielectric constant and mechanical properties of low-k media by adjusting gas ratios and plasma parameters.
Functional layer sedimentation
Anti reflective coating: reduces reflection loss during photolithography and improves pattern resolution.
Anti reflective coating: enhances the light transmittance of optical components such as sensors and cameras.
Advantages: PECVD can achieve precise stacking of multi-layer thin films and optimize optical performance.

2. Analysis of Technical Advantages
Low temperature process compatibility
PECVD can deposit thin films at 200-450 ℃, much lower than the 600-1200 ℃ of traditional CVD. It is suitable for flexible substrates (such as polyimide) and temperature sensitive materials (such as organic semiconductors) to avoid thermal damage.
High sedimentation rate and uniformity
The deposition rate can reach 10-100 nm/min, which is multiple times that of traditional CVD and suitable for large-scale production.
The uniformity of film thickness is better, meeting the stringent requirements of advanced processes for uniformity.
Material controllability and multifunctionality
By adjusting plasma parameters (power, pressure, gas ratio), the composition, structure, and stress of the thin film can be precisely controlled.
Supporting sedimentary materials include insulators (SiO ₂, SiN ₓ), conductors (polycrystalline silicon), semiconductors (amorphous silicon), and functional materials (such as low-k dielectrics and anti reflective layers).
Process integration degree
It can integrate multi-step processes (such as deposition+annealing+doping) to reduce process steps and pollution risks.
For example, in solar cell manufacturing, PECVD can simultaneously deposit silicon nitride anti reflection film and transparent conductive film to improve photoelectric conversion efficiency.

3. Typical case
CMOS Device Manufacturing
The SiO ₂/SiN ₓ stack deposited by PECVD serves as the gate insulation layer and field oxide layer, ensuring stable device performance.
Low temperature process compatible with flexible substrates, suitable for flexible chips in wearable devices.
3D NAND flash memory
Low k dielectric materials deposited by PECVD, such as SiCOH, are used for multi-layer stacked structures to reduce parasitic capacitance and improve storage density.
Power device packaging
The SiN ₓ/SiO ₂ stacked film deposited by PECVD serves as the encapsulation layer, resulting in lower water oxygen permeability and extended device lifespan.

4. Development Trends
Application of new materials
PECVD process development for third-generation semiconductors (such as SiC, GaN) and two-dimensional materials (such as MoS ₂) to meet the needs of high-frequency and high-power devices.
Equipment innovation
Multi chamber continuous deposition technology improves production efficiency, and pulse plasma source optimizes film quality.
Intelligence and automation
Integrating sensors and AI algorithms to achieve real-time control of process parameters, improving production stability and yield.
green technology
Developing low-energy and low emission processes, using environmentally friendly precursor gases and efficient exhaust gas treatment systems, in line with carbon neutrality goals.