Annealing experiment of high-temperature tube furnace for small-scale experiments

The high-temperature tube furnace used in small-scale experiments can efficiently complete annealing experiments. Through precise temperature control, atmosphere adjustment, and flexible operation, it can meet the annealing needs of materials such as metals, semiconductors, ceramics, etc., and optimize material properties. The following is a specific analysis:

1. The core objective of annealing experiment
Annealing is the process of eliminating internal stress, adjusting grain size, and improving microstructure of materials through heating, insulation, and cooling, thereby enhancing their toughness, strength, conductivity, and other properties. The key parameters of the experiment include:
Temperature range: It is usually necessary to reach a temperature above the phase transition temperature of the material (such as 500-800 ℃ for metal annealing and 800-1200 ℃ for semiconductor annealing).
Atmosphere control: Inert gas (such as argon) protection is required to prevent oxidation, or specific gases (such as hydrogen) participate in the reduction reaction.
Temperature uniformity: The temperature difference in the constant temperature zone should be ≤± 5 ℃ to ensure uniform heating of the sample.
Operational flexibility: Supports complex processes such as program heating, segmented insulation, and rapid cooling.

2. Adaptability of Small High Temperature Tube Furnace
Temperature control capability
The maximum temperature of a typical tube furnace can reach 1200-1700 ℃, with a temperature control accuracy of ± 1 ℃, which can accurately meet the annealing temperature requirements.
For example, when annealing metal pipes at 800 ℃, the tube furnace can stably maintain the target temperature and avoid uneven performance caused by temperature differences.
Atmosphere flexibility
Equipped with a vacuum system (maximum vacuum degree ≤ 5 × 10 ⁻⁴ Pa) and a gas flow control device (accuracy ± 1sccm), supporting inert gases (argon, nitrogen), reducing gases (hydrogen) or mixed atmospheres.
For example, when annealing semiconductor materials, argon gas is introduced to protect them from oxidation; When annealing metal powder, hydrogen gas is introduced for reduction reaction.
Temperature uniformity and operational convenience
The furnace adopts a double-layer structure, with insulation materials such as ceramic fibers filled in the middle. The length of the constant temperature zone is 200-1000mm, and the temperature uniformity is ≤± 3 ℃.
Equipped with an intelligent temperature control system (such as PID programmable instrument), supporting 30 stage programmed temperature control, and can preset parameters such as heating rate, insulation time, and cooling rate.
For example, when annealing ceramic based composite materials, uniform grain growth can be achieved through programmed temperature control to improve material strength.
Security and Extension Features
Equipped with overcurrent protection, overheating protection, and automatic power-off function to prevent experimental accidents.
Quick cooling devices (such as water-cooled sleeves) or independent heating zone designs can be optionally selected to meet special process requirements.

3. Experimental scenario verification
Annealing of metal materials
Case: Annealing and cold working copper tubes to eliminate internal stress and restore ductility.
Operation: Under argon protection, heat up to 600 ℃ at a rate of 5 ℃/min, hold for 2 hours, and then cool down with the furnace.
Result: The hardness of the copper tube decreases, the toughness improves, and it is easier for subsequent processing.
Semiconductor material annealing
Case: Metal vanadium thin film after annealing magnetron sputtering, forming vanadium dioxide thin film.
Operation: Quickly raise the temperature to 800 ℃ at 50 ℃/s in an oxygen atmosphere, hold for 1 minute, and then air cool.
Result: A uniform oxide layer is formed on the surface of the film, the phase transition temperature range is narrowed, and the performance is stable.
Ceramic material annealing
Case: Annealing alumina ceramic substrate to eliminate sintering stress and improve flatness.
Operation: Heat up to 1200 ℃ at a rate of 10 ℃/min in air, hold for 4 hours, and then quench with water.
Result: The substrate warpage is reduced and the surface roughness is improved, making it suitable for high-precision packaging.

4. Comparative advantages with muffle furnace
Temperature uniformity: The tube furnace adopts a single tube or multi temperature zone design, and the temperature uniformity in the constant temperature zone is better than that of the muffle furnace, making it suitable for temperature sensitive annealing experiments.
Atmosphere control: Tube furnaces can flexibly switch atmospheres, while muffle furnaces usually only support air oxidation, which limits the application scenarios of some experiments.
Operational flexibility: Tube furnaces support complex processes such as programmed heating and rapid cooling, while muffle furnaces have relatively limited functions.