What substrate thin film deposition is suitable for laboratory tubular PECVD electric furnace?

The laboratory tubular PECVD electric furnace is suitable for thin film deposition on various substrates due to its low-temperature process, high uniformity, and multifunctionality, especially in the fields of new energy, semiconductors, and flexible electronics. The following are the main types of substrates and specific application scenarios that it is suitable for:

1. Rigid substrate
Silicon wafer (monocrystalline silicon, polycrystalline silicon)
Application scenarios: solar cells (such as PERC, TOPCon, HJT), semiconductor devices (such as MOSFET, IGBT).
Deposition film:
Anti reflection film: Silicon nitride (SiNx), deposited at low temperatures (300-450 ℃) to reduce thermal damage to silicon wafers and improve photoelectric conversion efficiency.
Passivation film: Aluminum oxide (Al ₂ O3) or SiNx/Al ₂ O3 stack, reduces surface recombination rate and prolongs carrier lifetime.
Tunneling oxide layer: ultra-thin SiO ₂ (1-2nm), used for carrier selective contact in TOPCon batteries.
glass substrate
Application scenarios: Photovoltaic glass coating, display panels (such as TFT-LCD, OLED).
Deposition film:
Transparent conductive film: Zinc oxide (ZnO) or aluminum doped zinc oxide (AZO), replacing expensive indium tin oxide (ITO), used for flexible displays or photovoltaic cell front electrodes.
Anti reflection film: SiNx or SiO ₂/TiO ₂ laminated to reduce glass surface reflection and improve transmittance.
Ceramic substrates (such as alumina, aluminum nitride)
Application scenarios: power electronic devices (such as high-power LEDs, laser diodes), MEMS sensors.
Deposition film:
Insulation layer: SiO ₂ or Si ∝ N ₄, providing electrical isolation and mechanical protection.
Metalization layer: Deposition of metals such as titanium (Ti)/platinum (Pt)/gold (Au) on ceramic surfaces for electrode or interconnect purposes.

2. Flexible substrate
Polymer films (such as polyimide PI, polyester PET)
Application scenarios: flexible solar cells, wearable electronic devices, flexible displays.
Deposition film:
Transparent conductive film: AZO or silver nanowire (AgNW) composite film, replacing ITO to achieve flexible transparent electrodes.
Barrier layer: SiNx or Al ₂ O3, prevents water vapor and oxygen from penetrating, extending the lifespan of flexible devices.
Passivation layer: In perovskite solar cells, SiO ₂ or Al ₂ O3 is deposited to protect the perovskite layer from environmental degradation.
Metal foil (such as stainless steel, copper, aluminum)
Application scenarios: Flexible batteries (such as lithium-ion battery current collectors), flexible circuit boards (FPCs).
Deposition film:
Insulation layer: SiO ₂ or Si ∝ N ₄, to prevent short circuit between metal foil and active material.
Functional coating: Depositing carbon materials (such as graphene) or conductive polymers to enhance the conductivity or corrosion resistance of the current collector.

3. Composite substrate
Fiber reinforced composite materials (such as carbon fiber, glass fiber reinforced polymers)
Application scenarios: aerospace, automotive lightweight components.
Deposition film:
Protective coating: SiC or Si ∝ N ₄, enhancing the high temperature resistance and wear resistance of composite materials.
Functional coating: Deposition of metal or ceramic thin films to achieve electromagnetic shielding or thermal management functions.
3D structured substrates (such as micro/nano structures, porous materials)
Application scenarios: photocatalysis, sensors, biomedical devices.
Deposition film:
Functional coating: Deposition of TiO ₂ photocatalytic film on 3D porous ceramic surface for air purification or water splitting.
Biocompatible coating: Deposition of hydroxyapatite (HA) on the surface of medical titanium alloys to enhance bone integration performance.

4. Special substrate
Compound semiconductors (such as GaAs, InP, GaN)
Application scenarios: high-frequency electronic devices (such as 5G communication chips), optoelectronic devices (such as lasers, LEDs).
Deposition film:
Passivation layer: SiNx or Al ₂ O3, reduces surface density of states and improves device reliability.
Dielectric layer: SiO ₂ or Si ∝ N ₄, used for optical waveguides or capacitor structures.
Graphene/2D materials
Application scenarios: high-performance electronic devices, sensors, energy storage.
Deposition film:
Encapsulation layer: Deposition of Al ₂ O ∝ or h-BN to protect graphene from environmental degradation.
Functional layer: Deposition of metal or semiconductor thin films on the surface of graphene to construct heterojunction devices.
Summary of Advantages
Low temperature compatibility: Deposition temperature of 200-450 ℃ to avoid deformation or performance degradation of heat sensitive substrates.
High uniformity: Multi temperature zone design (such as 6-zone heating) controls the temperature difference within the plane at a lower temperature, ensuring the uniformity of film thickness.
Multifunctionality: Supports the deposition of various thin films such as dielectric films (SiO ₂, Si ∝ N ₄), conductive films (AZO, ITO substitutes), and passivation films (Al ₂ O ∝).
Environmental Economy: Low temperature technology reduces energy consumption and conforms to the trend of green manufacturing.