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Features of CVD system products

Features of CVD system products:
1. CVD system compatible, atmospheric pressure and micro positive pressure growth modes
The growth of graphene can be carried out in CVD system at any pressure between 1000Pa and 0.1pA
3 CVD system is controlled by computer and can set many kinds of growth parameters
The CVD system can be used to prepare high-quality, large-area graphene and other carbon materials, with dimensions up to several centimeters, to study the dynamic process
5. CVD system has high deposition efficiency; the composition of the film is accurate and controllable, and the ratio range is large; the thickness range is wide, from several hundred angstroms to several millimeters, which can realize thick film deposition and mass production
Technical features of CVD:
It has a series of advantages, such as low deposition temperature, easy to control film composition and thickness, good uniformity and repeatability, excellent step coverage, wide application range, simple equipment, etc
CVD method can deposit almost all kinds of thin films needed in IC process, such as doped or undoped SiO2, polysilicon, amorphous silicon, silicon nitride, metal (tungsten, molybdenum), etc